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| SCS521DS Elektronische Bauelemente 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free DESCRIPTION Silicon epitaxial planar Schottky barrier Diodes Small surface mounting type High reliability WBFBP02C APPLICATION High speed switching For Detection For portable equipment: (i.e. Mobile phone, MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 1 Cathode LC M B EF A D J H M G 2 Anode K 1 REF. A B C D E F Millimeter Min. Max. 0.950 1.050 0.550 0.650 0.450 0.550 0.450 REF. 0.400 REF. 0.275 0.325 REF. G H J K L M 2 Millimeter Min. Max. 0.275 0.325 0.275 0.325 0.275 0.325 0.675 0.725 0.010 0.070 0.010 REF. PACKAGE INFORMATION Weight: 0.0123 g (approximately) MARKING CODE F +Anode Cathode - MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single diode at TA = 25C) Parameter DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current Junction, Storage Temperature Symbol VR IO IFSM TJ, TSTG Limits 30 100 1.0 +125, -40 ~ +125 Unit V mA A ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise specified) Parameters Forward Voltage Reverse Current Symbol VF IR Min. - Typ. - Max. 0.35 10 Unit V uA Test Conditions IF = 10mA VR = 10V 01-June-2008 Rev. A Page 1 of 2 SCS521DS Elektronische Bauelemente 0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers RATINGS AND CHARACTERISTIC CURVES 01-June-2008 Rev. A Page 2 of 2 |
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